UniversityWafer

UniversityWafer, Inc. and the company's partners specialize in Gallium Arsenide (GaAs) and Indium Phosphide (InP) and the company can grow an epi layer on indium to fabricate Indium Gallium Arsenide (InGaAs) wafers in single or multi-wafer reactors. Wafer diameters can range from 2", 3", 4", and 6" diameter. The company also provide custom services... for customer-specific dimensions. The epitaxial growth of a semiconductor material using metal-organic chemical vapor deposition is a very versatile and cost-effective process. The material is directly deposited onto a substrate and has a very high resistivity. It can also be grown on an epitaxial buffer layer. The method is particularly effective for producing thin films with a wide bandgap, and it has the advantage of being faster and more reproducible than Silicon implantation.Read More