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Published on: 11/27/2004
Last Visited: 11/27/2004
Booyong S. Lim
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Booyong S. Lim
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Booyong S. Lim, Technology Specialist (978) 341-0036 ext. 3407 Booyong.Lim@hbsr.com Print this bio
Booyong Shim Lim received a B.S. degree, summa cum laude, in Chemistry and Chemistry Education from Seoul National University in Seoul, Korea.She earned a Ph.D. in Chemistry from Harvard University, where the title of her doctoral thesis was "Inorganic and Bioinorganic Aspects of Iron, Copper, Nickel and Molybdenum Chemistry."
As a Research Assistant, she synthesized and characterized biologically relevant transition metal complexes in the study of active sites of cyanide-inhibited heme-copper oxidases, the DMSO reductase enzyme family, and the sulfite oxidase enzyme family.In this position, Dr. Lim obtained experience in organic and inorganic syntheses, various analytical techniques including X-ray crystallography, EPR, FT-NMR, FT-IR and UV/vis spectroscopies, chromatographic techniques including GC and HPLC, and various electrochemical characterization methods.As a Postdoctoral Fellow at Harvard, where her research was focused on the development of new materials for various microelectronic devices using atomic layer chemical vapor deposition (ALD) method, Dr. Lim developed new various amido and acetamidinato transition metal and rare-earth metal precursors, obtained experience in growing metal oxide thin films such as lanthanum oxides, cobalt oxide, and aluminum oxides and pure transition metal thin films including copper and cobalt using ALD method and acquainted various analytical techniques including ellipsometry, RBS, AFM, SEM, XPS, and XRD.Dr. Lim had also obtained experience in building and maintaining an instrument for ALD.
Dr. Lim has co-authored eighteen research articles which have been published in Nature Materials, Applied Physics Letters, Journal of American Chemical Society and Inorganic Chemistry.Dr. Lim is also a co-inventor on U.S. Patent Application as to deposition of metal thin films by ALD.