CommsDesign - Nanoscale devices called nearly fit for... -
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Published on: 12/18/2003
Last Visited: 12/19/2003
Separately, University of Arkansas professors Huaxiang Fu and Laurent Bellaiche recently reported simulation results that indicate individual nano-scale ferroelectric devices can also be harnessed reliably as semiconductor memories.
"Ferroelectricity is caused by atomic off-center displacements resulting from a delicate balance between short-range covalent and long-range Coulomb interactions.Consequently, many researchers speculated that the effect would disappear at the nanoscale," said Bellaiche."But our results show that large, robust off-center displacements exist in quantum dots as small as 5 nanometers."
Bulk ferroelectric materials spontaneously form into nanoscale dipoles, enabling them to transduce electricity.However, Bellaiche said, many doubted that such materials would retain their ferroelectric properties at the nanoscale.To find out, Fu and Bellaiche examined barium titanium oxide in 5-nm-diameter nanoparticles (called quantum dots because of the predominance of quantum confinement effects in particles so small).
They found the ferroelectric transducing effect still present at 5 nm, albeit in slightly less efficient form.Instead of forming long chains, Fu and Bellaiche said, the nanoscale ferroelectric forms into small magnetic vortexes.However, by applying a magnetic field, Fu and Bellaiche were able to "unravel" the vortexes and achieve performance comparable to that of bulk ferroelectrics.