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This profile was last updated on 3/21/16  and contains information from public web pages and contributions from the ZoomInfo community.

Mr. Shawn Gibb

Wrong Shawn Gibb?

Engineering Team

Phone: (518) ***-****  HQ Phone
Email: g***@***.com
Crystal IS , Inc.
70 Cohoes Avenue
Green Island , New York 12183
United States

Company Description: Crystal IS was incorporated and founded in New York State, in March of 1997. The company recently relocated from the RPI Incubator center, to the Green Island Tech...   more
Background

Employment History

11 Total References
Web References
Shawn Gibb Chief ...
www.akoustis.com [cached]
Shawn Gibb Chief Material Scientist
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Shawn Gibb Chief Material Scientist Shawn Gibb is Chief Material Scientist and has over 18 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Akoustis in May 2015 he served as the Vice President of Engineering at Crystal IS having direct responsibility for the bulk growth, wafering, and polishing of their proprietary Aluminum Nitride (AlN) substrate materials. Additionally he directed the epitaxial growth efforts for all Ultra Violet Light Emitting Diode (UV-LED) products, ultimately commercializing the world's first commercial products on single crystal, bulk AlN. Mr. Gibb has also worked for RF Micro Devices (now Qorvo) where he was responsible for the development, and transfer to production of III-N materials and devices used in their 2.14 GHz transistor product offerings. In addition, Mr. Gibb served as principle investigator and program manager for several III-N specific research contracts in cooperation with the Air Force Research Labs (AFRL) and the Office of Naval Research (ONR). Shawn has a M.E. in Materials Engineering from Stevens Institute of Technology as well as B.S./B.E. degrees in Chemistry and Chemical Engineering from New York University and Stevens Institute of Technology respectively. He also has six (6) patents relating to the growth and processing of wide bandgap materials and devices.
Crystal IS – Management Team
www.cisuvc.com [cached]
Shawn Gibb,Vice President of Engineering Mr. Gibb has been leading the engineering team at Crystal IS since 2008. He has 15 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Crystal IS he held a position at RF Micro Devices where he was responsible for developing and scaling of III-N materials and devices used in their high power transistor product offerings. He has four patents relating to the growth and processing of wide bandgap materials and devices. In his spare time Shawn enjoys playing bass guitar and spending time with his family.
Crystal IS Team | UV Technology Experts - Crystal IS
www.crystal-is.com [cached]
Shawn Gibb Vice President of Engineering
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Shawn Gibb Vice President of Engineering Phone: Email:gibb@crystal-is.com Mr. Gibb has been leading the engineering team at Crystal IS since 2008. He has 15 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Crystal he held a position at RF Micro Devices where he was responsible for developing and scaling of III-N materials and devices used in their high power transistor product offerings. Shawn has a M.E. in Materials Engineering from Stevens Institute of Technology as well as B.S./B.E. degrees in Chemistry and Chemical Engineering from New York University and Stevens Institute of Technology, respectively. He has four patents relating to the growth and processing of wide bandgap materials and devices. In his spare time Shawn enjoys playing bass guitar and spending time with his family.
Management Team | Crystal IS - Crystal IS
crystal-is.overitmedia.com [cached]
Shawn Gibb
VP Engineering
Management Team | Crystal IS - Crystal IS
www.crystal-is.com [cached]
Shawn Gibb
Vice President of Engineering Mr. Gibb has over 13 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Crystal IS in July of 2008, he was employed at RF Micro Devices where he was responsible for the development, and transfer to production of III-N materials and devices used in their 2.14 GHz transistor product offerings. In addition, Mr. Gibb has served as principle investigator and program manager for several III-N specific research contracts in cooperation with the Air Force Research Labs (AFRL) and the Office of Naval Research (ONR). Shawn has a M.E. in Materials Engineering from Stevens Institute of Technology as well as B.S./B.E. degrees in Chemistry and Chemical Engineering from New York University and Stevens Institute of Technology, respectively. He also has four patents relating to the growth and processing of wide bandgap materials and devices.
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