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Wrong Shawn Gibb?

Shawn Gibb

Vice President of Engineering

Crystal IS , Inc.

HQ Phone:  (518) 271-7375

Direct Phone: (518) ***-**** ext. ***direct phone

Email: g***@***.com

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I agree to the Terms of Service and Privacy Policy. I understand that I will receive a subscription to ZoomInfo Community Edition at no charge in exchange for downloading and installing the ZoomInfo Contact Contributor utility which, among other features, involves sharing my business contacts as well as headers and signature blocks from emails that I receive.

Crystal IS , Inc.

70 Cohoes Avenue

Troy, New York,12183

United States

Company Description

Crystal IS, an Asahi Kasei company and ISO 9001:2008 certified, is an innovative U.S.-based manufacturer of proprietary, high-performance UVC LEDs. Crystal IS products are suitable for monitoring, disinfection and sterilization in a variety of applications, in... more.

Find other employees at this company (53)

Background Information

Employment History

Chief Materials Scientist

Akoustis Inc


Manager, GaN Materials

RF Micro Devices , Inc.


Web References(10 Total References)


Management | Akoustis Technologies

www.akoustis.com [cached]

Shawn Gibb
Chief Material Scientist Shawn Gibb Chief Material Scientist "Shawn Gibb is Chief Material Scientist and has over 19 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Akoustis in May 2015 he served as the Vice President of Engineering at Crystal IS having direct responsibility for the bulk crystal growth, wafering, and polishing of their proprietary Aluminum Nitride (AlN) substrate materials. Additionally, he directed the research and development of epitaxial growth for all Ultraviolet Light Emitting Diode (UV-LED) products, ultimately commercializing the world's first commercial products on single crystal, bulk AlN. Mr. Gibb has also worked for RF Micro Devices (now Qorvo) where he was responsible for the development, and transfer to production of III-N materials and devices used in their 2.14 GHz transistor product offerings. In addition, Mr. Gibb served as principle investigator and program manager for several III-N specific research contracts in cooperation with the Air Force Research Labs (AFRL) and the Office of Naval Research (ONR). Shawn has a M.E. in Materials Engineering from Stevens Institute of Technology as well as B.S./B.E. degrees in Chemistry and Chemical Engineering from New York University and Stevens Institute of Technology respectively.


Crystal IS – Management Team

www.cisuvc.com [cached]

Shawn Gibb,Vice President of Engineering
Mr. Gibb has been leading the engineering team at Crystal IS since 2008. He has 15 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Crystal IS he held a position at RF Micro Devices where he was responsible for developing and scaling of III-N materials and devices used in their high power transistor product offerings. He has four patents relating to the growth and processing of wide bandgap materials and devices. In his spare time Shawn enjoys playing bass guitar and spending time with his family.


Crystal IS Team | UV Technology Experts - Crystal IS

www.crystal-is.com [cached]

Shawn Gibb Vice President of Engineering
Shawn Gibb Vice President of Engineering Phone: Email:gibb@crystal-is.com Mr. Gibb has been leading the engineering team at Crystal IS since 2008. He has 15 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Crystal he held a position at RF Micro Devices where he was responsible for developing and scaling of III-N materials and devices used in their high power transistor product offerings. Shawn has a M.E. in Materials Engineering from Stevens Institute of Technology as well as B.S./B.E. degrees in Chemistry and Chemical Engineering from New York University and Stevens Institute of Technology, respectively. He has four patents relating to the growth and processing of wide bandgap materials and devices. In his spare time Shawn enjoys playing bass guitar and spending time with his family.


Management Team | Crystal IS - Crystal IS

crystal-is.overitmedia.com [cached]

Shawn Gibb
VP Engineering


Management Team | Crystal IS - Crystal IS

www.crystal-is.com [cached]

Shawn Gibb
Vice President of Engineering Mr. Gibb has over 13 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Crystal IS in July of 2008, he was employed at RF Micro Devices where he was responsible for the development, and transfer to production of III-N materials and devices used in their 2.14 GHz transistor product offerings. In addition, Mr. Gibb has served as principle investigator and program manager for several III-N specific research contracts in cooperation with the Air Force Research Labs (AFRL) and the Office of Naval Research (ONR). Shawn has a M.E. in Materials Engineering from Stevens Institute of Technology as well as B.S./B.E. degrees in Chemistry and Chemical Engineering from New York University and Stevens Institute of Technology, respectively. He also has four patents relating to the growth and processing of wide bandgap materials and devices.


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