Laurent BossonCorporate Vice President, Front-End Manufacturing STMicroelectronics
...Laurent Bosson graduated in chemistry and physics from the University of Dijon, France. A French national, he began his professional career in 1964 with THOMSON-CSF.In 1985, he joined the French subsidiary of SGS Microelettronica as General Manager of the semiconductor devices manufacturing plant in Rennes, France. After the merger of SGS Microelettronica and Thomson Semiconducteurs into SGS-THOMSON Microelectronics (now STMicroelectronics), Laurent Bosson remained in Rennes until 1989, when he was appointed Corporate Vice President and Director of Central Manufacturing.His
responsibilities were soon expanded to include all MOS VLSI and mixed technology fabs.He
set up a broad rationalization program that resulted in improved manufacturing costs and a consolidation of processes and technologies.Under his
leadership, the Front-End manufacturing machine of STMicroelectronics
substantially improved and expanded. In January 1992, Laurent Bosson became President and CEO of the Company's operation in the Americas.
A believer in Total Quality Management, he
expanded and implemented this concept from the manufacturing lines into all other areas of the US Company
oversaw the opening and ramp-up of a flagship eight-inch (200mm) wafer fab with sub-micron capability in Phoenix, Arizona.
In 1995 he
received the mission to set up and start the third eight-inch submicron module of the Company in Catania, Sicily, followed by Rousset 200mm and Singapore 200mm in 1997.Under his
direction the Front-End Manufacturing organization
is presently working on a new 300mm Fab called M6 in Catania, Sicily.Additional sizable investments are continuously made in other ST Fabs throughout the world to keep them world class in quality and cost efficiency. Laurent Bosson has held the position of Chairman of the Board of the US subsidiary company, STMicroelectronics, Inc since 1996.