| Publication No. WO/2009/117007 Published on Sept. 24, Assigned to Innovalight for Composite Nanoparticle-Metal Metallization Contact Formation Method (American Inventors) US Fed News Service, Including US State News; 9/28/2009 ...dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions... ...more |
| Research on physics detailed by T. Herrmannsdorfer and co-authors. Electronics Newsweekly; 7/15/2009 According to a study from Dresden, Germany, "We demonstrate that the third elemental group-IV semiconductor, germanium, exhibits superconductivity at ambient pressure." "Using advanced doping and annealing techniques of state-of... ...more |
| New findings from C.I. Ventura and co-authors in the area of physics published.(Report) Physics Week; 6/16/2009 ...Argentina, "Ge1-xSnx alloys have proved difficult to form at large x, contrary to what happens with other group IV semiconductor combinations. However, at low x they are typical examples of well-behaved substitutional compounds, which... ...more |
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